q?v~zy??q?v?_ra]?????qcabgq HFU2N60F_hfd2n60f HFU2N60F / hfd2n60f 600v n-channel mosfet oct 2016 parameter value unit bv dss 600 v i d 2a r ds(on), typ 3.6
qg ,typ 6.5 nc key parameters features absolute maximum ratings t c =25 e unless otherwise specified symbol parameter value unit v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 2.0 * a drain current ? continuous (t c = 100 e ) 1.3 * a i dm drain current ? pulsed (note 1) 8.0 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 110 mj i ar avalanche current (note 1) 2.0 a e ar repetitive avalanche energy (note 1) 4.2 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25 e )* 2.5 w power dissipation (t c = 25 e ) - derate above 25 e 42 w 0.34 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e symbol parameter value unit r jc junction-to-case, max. 2.98 e /w r ja junction-to-ambient (minimum pad of 2 oz copper), max. 110 e /w r ja junction-to-ambient (* 1 in 2 pad of 2 oz copper), max. 50 e /w thermal resistance characteristics HFU2N60F to-251 hfd2n60f to-252 symbol g d s g d s ? originative new design ? very low intrinsic capacitances ? excellent switching characteristics ? 100% avalanche tested ? rohs compliant * drain current limited by maximum junction temperature
q?v~zy??q?v?_ra]?????qcabgq HFU2N60F_hfd2n60f symbol parameter test conditions min typ max unit on characteristics v gs gate threshold voltage v ds = v gs , i d = 250 $ 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1 a -- 3.6 4.5 ? g fs forward transconductance v ds = 30 v i d = 1 a -- 1.2 -- s off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 $ 600 -- -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 $ v ds = 480 v, t c = 125 e -- -- 100 $ i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 na dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 290 -- pf c oss output capacitance -- 37 -- pf c rss reverse transfer capacitance -- 4.5 -- pf switching characteristics t d(on) turn-on time v ds = 300 v, i d = 2 a, r g = 25 ? (note 4,5) -- 16 -- ns t r turn-on rise time -- 17 -- ns t d(off) turn-off delay time -- 28 -- ns t f turn-off fall time -- 20 -- ns q g total gate charge v ds = 480 v, i d = 2 a, v gs = 10 v (note 4,5) -- 6.5 -- nc q gs gate-source charge -- 1.5 -- nc q gd gate-drain charge -- 2.2 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 2 a i sm maximum pulsed drain-source diode forward current -- -- 8 v sd drain-source diode forward voltage v gs = 0 v, i s = 2 a -- -- 1.4 v trr reverse recovery time v gs = 0 v, i s = 2 a di f /dt = 100 a/ v -- 200 -- ns qrr reverse recovery charge -- 0.7 -- & notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=50mh, i as =2a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t j =25 e unless otherwise specified
q?v~zy??q?v?_ra]?????qcabgq HFU2N60F_hfd2n60f typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 01234567 0 2 4 6 8 10 12 v gs , gate-source voltage [v] q g , total gate charge [nc] * note : i d = 2.0a v ds = 300v v ds = 120v v ds = 480v 10 -1 10 0 10 1 0 100 200 300 400 500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 2345678910 0.1 1 -25 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.20.40.60.81.01.21.41.61.8 0.1 1 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 012345 0 3 6 9 12 i d , drain current[a] r ds(on) [ : ], drain-source on-resistance v gs = 10v v gs = 20v * note : t j = 25 o c
q?v~zy??q?v?_ra]?????qcabgq HFU2N60F_hfd2n60f figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve typical characteristics (continued) t 2 t 1 p dm 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 2.98 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5
note : 1. v gs = 10 v 2. i d = 1 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
q?v~zy??q?v?_ra]?????qcabgq HFU2N60F_hfd2n60f fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]?????qcabgq HFU2N60F_hfd2n60f fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]?????qcabgq HFU2N60F_hfd2n60f package dimension p t w h r g o { v t y \ x h p g 7.0 0.1 / 9.5 0.2
q?v~zy??q?v?_ra]?????qcabgq HFU2N60F_hfd2n60f package dimension k t w h r g o { v t y \ y h p g
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